page1of7 semiconductor 12pt series rohs rohs sensitive and standard scrs, 12a symbol i t rms ( ) rms on state current full sine wave i tsm non repetitive surge peak on state current full cycle t initial = 25 c) ( , j a i t 2 i t value for fusing 2 98 a s 2 di dt / critical rate of rise of on state current 50 i gm peak gate current p g av ( ) average gate power dissipation t stg storage temperature range operating junction temperature range 40 + 150 to 40 + 125 to oc a s / aa w unit value 140 145 f=50hz f=60hz t=20ms t=16.7ms t =10ms p f=60hz t =125oc j t =125oc j t =125oc j t =20s p t j absolute maximum ratings parameter test conditions main features symbol value unit i t(rms) v /v drm rrm i gt 12 a v m a 0.2 15 to 600 to 1000 description (180conductionangle) 4 1 averageonstatecurrent (180conductionangle) i t av ( ) 8 a 1 2 3 1 2 3 2 2 2 1 2 3 to-220ab (non-lnsulated) to-251 (i-pak) to-252 (d-pak) i = 2xl , t ns g gt r 100 1 2 3 to-220ab (lnsulated) (12ptxxf) (12ptxxg) (12ptxxa) (12ptxxai) (g)3 1(a1) (a2) 2 www.nellsemi.com t =105c c t =90c c to251/to252/to220ab/to263 to220abinsulated to251/to252/to220ab/to263 to220abinsulated t =105c c t =90c c available either in sensitive or standard gate triggering levels, the 12a scr series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, i n r u s h c u r r e n t l i m i t i n g c i r c u i t s , c a p a c i t i v e ignition and voltage regulation circuits. available in through-hole or surface-mount they provide an optimized performance discharge packages, in a limited space. a 2 a 2 g a 1 to 263 ( d pak) 2 (12ptxxh) 12
page2of7 semiconductor 12pt series rohs rohs 12ptxxxx unit i gt v gd i h ma dv dt / v tm i drm i rrm ma i l v =12v,r =33 d l v =v ,r =3.3k d drm l i =500ma,gateopen t i =1.2i g gt v =67%v , gateopen d drm 0.2 15 200 0.85 ma vv ma v/s i =24a, tm t =380s p t =125c j t =25c j t =125c j v a standard electrical specifications ( t j = 25 ) unless otherwise specified oc, test conditions symbol v =v drm rrm 1.6 5 2 min. max. max. min. max. min. max. max. max. thermal resistance r th j c ( ) junction to case dc ( ) r th j a ( ) junction to ambient (dc) 1.3 70 c/w c/w unit value symbol parameter ipak/dpak/to220ab/to263 dpak ipak to220ab,to220abinsulated 4.6 45 s=0.5cm 2 v gt www.nellsemi.com 0.5 t 1.3 2 15 5 t =125c j max. 30 30 60 40 v to thresholdvoltage v r d t =125c j max. 30 m ma t =25c j t =125c j dynamicresistance 12ptxxxx-s unit i gt v gd ma dv dt / v tm i drm i rrm ma i h v =12v,r =140 d l v =v ,r =3.3k d drm l , =220 r gk i =10 a rg i =50ma r =1k t , gk v =67%v , r =220 d drm gk 0.1 6 0.85 a vv v/s i =24a, tm t =380s p t =125c j t =25c j t =125c j v a sensitive electrical characteristics ( t j = 25 ) unless otherwise specified oc, test conditions symbol v =v r =220 drm rrm, gk 1.6 5 2 max. max. min. max. min. max. max. max. v gt 0.8 200 t =125c j 8 5 v to thresholdvoltage v r d t =125c j max. 30 m v t =25c j t =125c j dynamicresistance v rg min. i l i =1ma r =1k g , gk max. 5 ma to220abinsulated 60 s=coppersurfaceundertab d2pak s=1cm 2 100
page3of7 semiconductor rohs rohs 12pt series ordering information scheme scr series package type current voltage code i gt sensitivity a to220ab(noninsulated) = ai to220ab(insulated) = 12=12a,i t(rms) t=0.5~5ma 12 pt 06 - s 06=600v f=to251(ipak) g=to252(dpak) 08=800v www.nellsemi.com ordering information 12ptxxay 12ptxxay ordering type marking package weight base q , ty delivery mode to220ab 2.0g 50 tube 12ptxxaiy 12ptxxaiy 2.3g 50 tube 12ptxxfy 12ptxxfy to251(ipak) 0.40g 80 12ptxxgy 12ptxxgy 0.38g 80 tube to252(dpak) to220ab(insulated) tube blank=2~15ma note : xx voltage y sensitivity = , = 10=1000v product selector part number voltage x x ( ) sensitivity 600 v a 200 1000 v 12ptxxas/12ptxxals 12ptxxfs 12ptxxgs v v vv 800 v v v package to220ab dpak v v v v v v v v v 12ptxxat/12ptxxalt v v v vv v vv v vv v 12ptxxa/12ptxxal 12ptxxft 12ptxxf 12ptxxgt 12ptxxg dpak dpak ipak ipak ipak to220ab to220ab a 0.5~5 m a 2~15 m a 200 ma 0.5~5 a 2~15 m a 200 a 0.5~5 m a 2~15 m s=70~200a 12ptxxhs a 20 d2pak d2pak d2pak a 0.5~5 m a 2~15 m v v v v v v v v v 12ptxxht 12ptxxh h=to263(d2pak) 12ptxxhy 12ptxxhy 50 tube 2.0g to263(d2pak)
semiconductor rohs rohs page4of7 0.0 0.2 0.4 0.6 0.8 1.6 12pt series 0.01 0.10 1.00 fig.5 relative variation of thermal impedance junctiontoambientversuspulseduration fig.6 relative variation of gate trigger and holdingcurrentversusjunction temperaturefori =200 a gt -40 www.nellsemi.com fig.3 average and dc onstate current versus ambient temperature (dpak) fig. relative variation of thermal impedance 4 junction to case versus pulse duration 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 1 e+0 0.1 0.2 0.5 1.0 i (av)(a) t fig. maximum average power dissipation versus 1 average on state current fig.2 average and dc onstate current versus case temperature p w ( ) 8 7 6 5 4 3 2 1 0 0 1 2 4 5 6 10 12 8 14 6 4 2 0 25 50 75 100 125 i (a) t(av) 0 1 e+1 1 e-2 1 e-1 1 e+0 1 e+2 5e+2 1.0 1.2 1.4 1.8 2.0 -20 0 20 40 60 80 100 120 140 1 e+1 1 e+2 1 e+3 i ,i ,i [tj]/i ,i ,i [tj=25 c] gt h l gt h l k=[zth(jc)/rth(jc)] k=[zth(ja)/rth(ja)] =180 360 i (a) t(av) 9 10 11 12 3 7 8 9 t case (c) dc =180 insulated to220ab to251/to252 to263/to220ab devicemountedonf r4with recommendedpadlayout t amb (c) =180 dpak dc d2pak 3.0 t p (s) t p (s) d2pak to220ab/ipak devicemountedonf r4with recommendedpadlayout dpak i gt l &i h l r =1k gk t j (c) (dank)
semiconductor rohs rohs page5of7 12pt series i (a) stm fig.11 surge peak onstate current versus numberofcycles fig.12 nonrepetitive surge peak onstate current andcorrespondingvaluesofl2tversus www.nellsemi.com 0.1 0 200 400 1.0 fig.9 relative variation of dv/dt immunity versusgatecathoderesistance 0 0.0 0.5 1.0 1.5 0.0 0.2 4.0 5.0 20 0 60 20 40 40 3.5 4.5 100 140 80 120 0.4 dv/dt[r ]/dv/dt[r =220] gk gk fig.7 relative variation of gate trigger and holdingcurrentversusjunction temperature fig.8 relative variation of holding current versusgatecathoderesistance (typicalvalues) dv/dt[c ]/dv/dt[r =220] gk gk 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 1 e-2 1 e-1 1 e+0 1 e+1 600 800 1000 1200 10.0 25 75 50 125 150 100 2.0 2.5 3.0 0.01 10 0 40 30 60 70 90 1 100 1000 20 50 10 80 100 0.10 1.00 10.00 10 100 1000 i [r ]/i [r =1k] h gk h gk i ,i ,i [tj]/i ,i ,i [tj=25 c] gt h l gt h l 3.0 2.5 2.0 1.5 1.0 0.5 0.0 (typicalvalues) fig.1 relative variation of dv/dt immunity 0 versusgatecathodecapacitance (typicalvalues)fori =200a gt i (a),i2t(a2s) tsm 5ma&15maseries i gt l &i h l t j (c) r (k) gk t =125 c j v =0.67xv d drm r (k) gk c (nf) gk v =0.67xv d drm t =125 c j r =220 gk 3.5 4.0 t =10ms p onecycle nonrepetitive t initial=25 c j numberofcycles 110 120 130 140 150 repetitive tc=105 c i2t i tsm tjinital=25 c t p (ms) di/dtiimitation 2000 200aseries t =25 c j sinusoidalpulsewidth
semiconductor rohs rohs page6of7 12pt series www.nellsemi.com fig.13 onstate characteristics (maximum values) fig.14 thermal resistance junction to ambient versuscoppersurfaceundertab(d2pak) 0.5 1.0 1.5 2.0 3.0 2.5 3.5 4.0 0.0 10 100 200 0 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 i (a) tm r (ja)( c/w) th case style 4t 6.4(0.52) 6.6(0.26) 5.2(0.204) 5.4(0.212) 1.5(0.059) 1.37(0.054) 9.4(0.37) 9(0.354) 16.3(0.641) 15.9(0.626) 4.6(0.181) 4.4(0.173) 0.85(0.033) 0.76(0.03) 0.65(0.026) 0.55(0.021) 1.9(0.075) 1.8(0.071) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 0.62(0.024) 0.45(0.017) 6.2(0.244) 6(0.236) to-251 (i-pak) 2.87 (0.113) 2.62(0.103) 9.40(0.370)9.14(0.360) 10.54(0.415) . max 16.13(0.635) 15.87 (0.625) pin 4.06(0.160)3.56(0.140) 1.45(0.057)1.14(0.045) 2.67(0.105)2.41(0.095) 2.65(0.104)2.45(0.096) 5.20 (0.205)4.95 (0.195) 0.90(0.035)0.70 (0.028) 3.91(0.154)3.74(0.148) 1 3 2 4.70(0.185) 4.44 0.1754 ( ) 1.39(0.055) 1.14 (0.045) 3.68(0.145)3.43(0.135) 8.89(0.350)8.38(0.330) 29.16(1.148) 28.40 (1.118) 14.22(0.560)13.46(0.530) 0.56(0.022)0.36(0.014) 2.79(0.110) 2.54(0.100) 15.32(0.603)14.55(0.573) to-220ab (g)3 1(a1) (a2) 2 v (v) tm tj=25 c tj=max tjmax v =0.85v t0 rd=30m 1 4.5 5.0 s(cm2) epoxyprintedcircuitboardfr4 copperthickness=35m dpak d2pak
semiconductor rohs rohs 12pt series rohs 1 2 2 3 1.14(0.045) 0.89(0.035) 0.76(0.030) 2.28(0.090) 4.57(0.180) 0.64(0.025) 6.4(0.251) 6.6(0.259) 5.4(0.212) 5.2(0.204) 1.5(0.059) 1.37(0.054) 9.35(0.368) 10.1(0.397) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) to-252 (d-pak) case style page7of7 (g)3 1(a1) (a2) 2 www.nellsemi.com to-263(d pak) 2 2.79(0.110) 0.36(0.014) 2.79(0.110)2.29(0.090) 1.40(0.055)1.19(0.047) 0 0.254(0 0.01) to to 1.40(0.055)1.14(0.045) 4.83(0.190)4.06(0.160) 10.45(0.411) 9.65(0.380) 6.22(0.245) 9.14(0.360)8.13(0.320) 15.00(0.591) 0.940(0.037)0.686(0.027) 2.67(0.105)2.41(0.095) 5.20(0.205)4.95(0.195) 15.85(0.624) 3.56(0.140) 0.53(0.021)
|
